In a major leap forward for high-speed flash memory, Chinese scientists have unveiled a revolutionary storage device that operates at a record-breaking speed. Developed by researchers at Fudan University, the new non-volatile memory device, dubbed PoX, stores data at one bit per 400 picoseconds — far surpassing current storage technologies.
Redefining Memory Speed
PoX memory sets a new global standard in semiconductor storage. With its ability to store one bit in just 400 picoseconds, it outpaces even the fastest volatile memories, such as Static RAM (SRAM) and Dynamic RAM (DRAM), which typically take between 1 to 10 nanoseconds per bit. To put it in perspective, a picosecond is a trillionth of a second — one-thousandth of a nanosecond.
This level of performance breaks a long-standing barrier in flash memory technology and could open new doors for advanced computing systems, especially those that rely on ultra-fast data processing.
Volatile vs. Non-Volatile Memory
Traditional volatile memories like SRAM and DRAM are fast but lose stored data once the power supply is interrupted. Non-volatile memories, on the other hand, retain data without power but are considerably slower. PoX changes that equation.
By merging the speed of volatile memory with the data retention capability of non-volatile types, PoX has effectively eliminated the main disadvantage of conventional flash storage.
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Innovation at the Atomic Scale
The Fudan University team achieved this breakthrough by designing a two-dimensional Dirac graphene-channel flash memory. The use of graphene — a single layer of carbon atoms arranged in a hexagonal lattice — is central to PoX’s performance. Its unique electronic properties allow for ultra-fast, low-power data operations.
The structure relies on a nanoscale architecture that improves charge mobility and reduces delay in data storage and retrieval. This architecture is especially promising for applications in Artificial Intelligence (AI), where data speed is critical.
AI-Assisted Development
According to lead researcher Zhou Peng, the team utilized AI algorithms to fine-tune the process testing conditions. This allowed them to maximize the performance potential of the new material and hardware configuration.
“By using AI to optimize our development path, we’ve significantly advanced the performance of non-volatile memory,” said Zhou. Their findings were recently published in the journal Nature, where a peer reviewer called the work “original” and noted its high relevance for future memory technologies.
Looking Ahead
With PoX, the future of flash storage looks faster and more energy-efficient than ever before. Its potential uses extend beyond consumer electronics into sectors like AI computing, space tech, autonomous vehicles, and secure data centers — all of which demand faster access to massive datasets.
If commercialized successfully, PoX could redefine how the world stores and accesses information, setting the stage for a new era in digital performance and storage innovation.
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